Sebastian Engelmann 
contact information
Quantum Systems Component LeadThomas J. Watson Research Center, Yorktown Heights, NY USA +1
9149451661
9149451661 links
Professional Associations
Professional Associations: American Vacuum Society | SPIE -- International Society of Optical Engineeringmore information
More information: Prof. Oehrlein, Univ. of Maryland, College Park | Prof. Shohet - Univ. of Wisconsin, Madison | Plasma-surface interactions for Photoresist Systems | Linked-in profile2019
Method of forming field effect transistor (FET) circuits, and forming integrated circuit (IC) chips with the FET circuits
John C Arnold, Robert L Bruce, Sebastian U Engelmann, Nathan P Marchack, Hiroyuki Miyazoe, Jeffrey C Shearer, Takefumi Suzuki
US Patent 10,304,692
John C Arnold, Robert L Bruce, Sebastian U Engelmann, Nathan P Marchack, Hiroyuki Miyazoe, Jeffrey C Shearer, Takefumi Suzuki
US Patent 10,304,692
2018
Rapid oxide etch for manufacturing through dielectric via structures
Engelmann Sebastian U, Hung Li-Wen, Joseph Eric, Osullivan Eugene, Waksman Jeff, Yang Cornelia Tsang
Engelmann Sebastian U, Hung Li-Wen, Joseph Eric, Osullivan Eugene, Waksman Jeff, Yang Cornelia Tsang
Selective dry etch for directed self assembly of block copolymers
Engelmann, Sebastian U and Jagtiani, Ashish V and Miyazoe, Hiroyuki and Tsai, Hsinyu
US Patent 9,941,121
Engelmann, Sebastian U and Jagtiani, Ashish V and Miyazoe, Hiroyuki and Tsai, Hsinyu
US Patent 9,941,121
Plasma shallow doping and wet removal of depth control cap
Bruce, Robert L and Chan, Kevin K and Engelmann, Sebastian U and Goldfarb, Dario L and Hopstaken, Marinus and Khojasteh, Mahmoud and Totir, George G and Yan, Hongwen and Yamazaki, Masahiro and others
US Patent App. 15/895,664
Bruce, Robert L and Chan, Kevin K and Engelmann, Sebastian U and Goldfarb, Dario L and Hopstaken, Marinus and Khojasteh, Mahmoud and Totir, George G and Yan, Hongwen and Yamazaki, Masahiro and others
US Patent App. 15/895,664
2017
Iii-v extension by high temperature plasma doping
Bruce, Robert L and Chan, Kevin K and Engelmann, Sebastian U and Mo, Renee T and Scerbo, Christopher and Yan, Hongwen and Yau, Jeng-Bang
US Patent App. 15/195,107
Bruce, Robert L and Chan, Kevin K and Engelmann, Sebastian U and Mo, Renee T and Scerbo, Christopher and Yan, Hongwen and Yau, Jeng-Bang
US Patent App. 15/195,107
Techniques for fabricating horizontally aligned nanochannels for microfluidics and biosensors
Engelmann, Sebastian U and Rossnagel, Stephen M and Zhang, Ying
US Patent 9,643,179
Engelmann, Sebastian U and Rossnagel, Stephen M and Zhang, Ying
US Patent 9,643,179
Reactive ion etching assisted lift-off processes for fabricating thick metallization patterns with tight pitch
Cohen, Guy M and Engelmann, Sebastian U and Holmes, Steve and Patel, Jyotica V
US Patent 9,728,444
Cohen, Guy M and Engelmann, Sebastian U and Holmes, Steve and Patel, Jyotica V
US Patent 9,728,444
High aspect ratio patterning of hard mask materials by organic soft masks
Brink, Markus and Engelmann, Sebastian U and Joseph, Eric A and Miyazoe, Hiroyuki
US Patent 9,728,421
Brink, Markus and Engelmann, Sebastian U and Joseph, Eric A and Miyazoe, Hiroyuki
US Patent 9,728,421
High selectivity nitride removal process based on selective polymer deposition
Dasaka, Ravi K and Engelmann, Sebastian U and Fuller, Nicholas CM and Nakamura, Masahiro and Wise, Richard S
US Patent 9,627,533
Dasaka, Ravi K and Engelmann, Sebastian U and Fuller, Nicholas CM and Nakamura, Masahiro and Wise, Richard S
US Patent 9,627,533
Low temperature encapsulation for magnetic tunnel junction
A.J. Annunziata, S.U. Engelmann, E.A. Joseph, G.P. Lauer, N.P. Marchack, D.A. Neumayer, M. Yamazaki
US Patent 9,691,972
A.J. Annunziata, S.U. Engelmann, E.A. Joseph, G.P. Lauer, N.P. Marchack, D.A. Neumayer, M. Yamazaki
US Patent 9,691,972
2016
Techniques for forming contacts for active BEOL
Sebastian U Engelmann, Steve J Holmes, Qinghuang Lin, Nathan P Marchack, Eugene J O'sullivan
US Patent 9,490,164
Sebastian U Engelmann, Steve J Holmes, Qinghuang Lin, Nathan P Marchack, Eugene J O'sullivan
US Patent 9,490,164
2015
Neutral hard mask and its application to graphoepitaxy-based directed self-assembly (dsa) patterning
Engelmann, Sebastian U and Khojasteh, Mahmoud and Neumayer, Deborah A and Papalia, John and Tsai, Hsinyu
US Patent App. 14/806,921
Engelmann, Sebastian U and Khojasteh, Mahmoud and Neumayer, Deborah A and Papalia, John and Tsai, Hsinyu
US Patent App. 14/806,921
Molecular radical etch chemistry for increased throughput in pulsed plasma applications
S.U. Engelmann, N.P. Marchack, M. Nakamura
US Patent 9,214,355
S.U. Engelmann, N.P. Marchack, M. Nakamura
US Patent 9,214,355
2013
Low-Temperature Sidewall Image Transfer Process Using ALD Metals, Metal Oxides and Metal Nitrides
Brink, Markus and Guillorn, Michael A and Engelmann, Sebastian U and Miyazoe, Hiroyuki and Pyzyna, Adam M and Sleight, Jeffrey W
US Patent App. 13/916,109
Brink, Markus and Guillorn, Michael A and Engelmann, Sebastian U and Miyazoe, Hiroyuki and Pyzyna, Adam M and Sleight, Jeffrey W
US Patent App. 13/916,109
WET CLEAN PROCESS FOR REMOVING CxHyFz ETCH RESIDUE
RL Bruce, SU Engelmann, EA Joseph, M Khojasteh, M Nakamura, SS Papa Rao, BN To, GG Totir, Y Zhu
RL Bruce, SU Engelmann, EA Joseph, M Khojasteh, M Nakamura, SS Papa Rao, BN To, GG Totir, Y Zhu
Protection of intermetal dielectric layers in multilevel wiring structures
Maxime Darnon, Geraud J. M. Dubois, Sebastian U. Engelmann, Teddie P. Magbitang, Sampath Purushothaman, Muthumanickam Sankarapandian, Willi Volksen
US Patent App 20130056874
Maxime Darnon, Geraud J. M. Dubois, Sebastian U. Engelmann, Teddie P. Magbitang, Sampath Purushothaman, Muthumanickam Sankarapandian, Willi Volksen
US Patent App 20130056874
Interconnect structure for improved time dependent dielectric breakdown
C Cabral, SU Engelmann, B Fletcher, EA Joseph, SV Nitta
C Cabral, SU Engelmann, B Fletcher, EA Joseph, SV Nitta
2012
Disposable carbon-based template layer for formation of borderless contact structures
G. Breyta, JB Chang, SU Engelmann, MA Guillorn, DP Klaus, AM Pyzyna
G. Breyta, JB Chang, SU Engelmann, MA Guillorn, DP Klaus, AM Pyzyna
Patterning transition metals in integrated circuits
C Cabral, SU Engelmann, BL Fletcher, MS Gordon, EA Joseph
C Cabral, SU Engelmann, BL Fletcher, MS Gordon, EA Joseph
Structure with isotropic silicon recess profile in nanoscale dimensions
Sebastian Ulrich Engelmann, Nicholas CM Fuller, Eric Andrew Joseph, Isaac Lauer, Ryan M Martin, James Vichiconti, Ying Zhang
US Patent 8,232,171
Sebastian Ulrich Engelmann, Nicholas CM Fuller, Eric Andrew Joseph, Isaac Lauer, Ryan M Martin, James Vichiconti, Ying Zhang
US Patent 8,232,171
2011
High fidelity patterning employing a fluorohydrocarbon-containing polymer
M Brink, SU Engelmann, NCM Fuller, MA Guillorn, H Miyazoe, M Nakamura
M Brink, SU Engelmann, NCM Fuller, MA Guillorn, H Miyazoe, M Nakamura
Borderless self-aligned metal contact patterning using printable dielectric materials
JB Chang, SU Engelmann, NCM Fuller, MA Guillorn, EA Joseph, AM Pyzyna
JB Chang, SU Engelmann, NCM Fuller, MA Guillorn, EA Joseph, AM Pyzyna
Nanoelectromechanical Structures Exhibiting Tensile Stress And Techniques For Fabrication Thereof
JB Chang, SU Engelmann, MA Guillorn, F Liu, CE Murray
JB Chang, SU Engelmann, MA Guillorn, F Liu, CE Murray
Method to transfer lithographic patterns into inorganic substrates
SU Engelmann, M Glodde, MA Guillorn
SU Engelmann, M Glodde, MA Guillorn
Lateral etch stop for nems release etch for high density nems/cmos monolithic integration
JB Chang, L Cang, SU Engelmann, MA Guillorn
JB Chang, L Cang, SU Engelmann, MA Guillorn
Low energy etch process for nitrogen-containing dielectric layer
M Brink, RL Bruce, SU Engelmann, NCM Fuller, H Miyazoe, M Nakamura
M Brink, RL Bruce, SU Engelmann, NCM Fuller, H Miyazoe, M Nakamura
NANOWIRE FET WITH TRAPEZOID GATE STRUCTURE
J W Sleight, S Bangsaruntip, S U Engelmann, Y Zhang
US Patent 20,110,315,950
J W Sleight, S Bangsaruntip, S U Engelmann, Y Zhang
US Patent 20,110,315,950
2010
Gate patterning of nano-channel devices
Nicholas CM Fuller, Sarunya Bangsaruntip, Guy Cohen, Sebastian U Engelmann, Lidija Sekaric, Qingyun Yang, Ying Zhang
US Patent 7,816,275
Nicholas CM Fuller, Sarunya Bangsaruntip, Guy Cohen, Sebastian U Engelmann, Lidija Sekaric, Qingyun Yang, Ying Zhang
US Patent 7,816,275
2009
Gate patterning of nano-channel devices
NCM Fuller, S Bangsaruntip, G Cohen, SU Engelmann, L Sekaric, Q Yang, Y Zhang
NCM Fuller, S Bangsaruntip, G Cohen, SU Engelmann, L Sekaric, Q Yang, Y Zhang
Projects and Groups
- 3D Semiconductor & Packaging Technology for Systems
- AI meets IoT
- Atomic Layer Etching
- Cognitive Technologies
- Fab and Characterization Capabilies
- Interconnect dielectrics
- Lithography Materials
- Logic Technologies
- Memory Technologies
- Nanoscale Fabrication
- Science & Technology
- Silicon Nanophotonic Packaging
- STM/AFM